منابع مشابه
Hyper-expanded interlayer separations in superconducting barium intercalates of FeSe.
Intercalation of Ba in β-FeSe by ammonothermal synthesis results in the formation of different superconducting phases with interlayer distance ranging between 8.4 and 13.1 Å. The values of Tc are primarily dependent on Ba content, and are further modulated by the interlayer spacing through facile intercalation and deintercalation of ammonia.
متن کاملElectric-field screening in atomically thin layers of MoS₂: the role of interlayer coupling.
1 Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft (The Netherlands). 2 Instituto de Ciencia de Materiales de Madrid. CSIC, Sor Juana Ines de la Cruz 3. 28049 Madrid, Spain. 3 Institute for Complex Systems (ISC), CNR, U.O.S. Sapienza, v. dei Taurini 19, 00185 Rome, Italy 4 Departamento de Física de la Materia Condensada. Universidad Autónoma de Madrid,...
متن کاملAb initio structure determination of interlayer expanded zeolites by single crystal rotation electron diffraction.
Layered solids often form thin plate-like crystals that are too small to be studied by single-crystal X-ray diffraction. Although powder X-ray diffraction (PXRD) is the conventional method for studying such solids, it has limitations because of peak broadening and peak overlapping. We have recently developed a software-based rotation electron diffraction (RED) method for automated collection an...
متن کاملThe MOS Single Electron Transistor (MOS-SET)
We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level quantization is clearly seen. The interpl...
متن کاملEmerging Photoluminescence in Monolayer MoS<sub>2</sub>
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum ...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2017
ISSN: 1369-7021
DOI: 10.1016/j.mattod.2016.10.004